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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2716GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain FEATURES * Low on-state resistance RDS(on)1 = 7.0 m MAX. (VGS = -10 V, ID = -7.0 A) RDS(on)2 = 11.3 m MAX. (VGS = -4.5 V, ID = -7.0 A) * Low Ciss: Ciss = 3000 pF TYP. * Built-in gate protection diode * Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 -0.05 6.0 0.3 4.4 0.8 1.8 MAX. 1.44 0.05 MIN. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.15 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M PA2716GR ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg -30 m20 m14 m140 2 2 150 -55 to + 150 -14 19.6 V V A A W W C C A mJ Gate Protection Diode Source Gate Drain EQUIVALENT CIRCUIT Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Body Diode Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4. Note4 Note4 IAS EAS PW 10 s, Duty Cycle 1% Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec Starting Tch = 25C, VDD = -15 V, RG = 25 , L = 100 H, VGS = -20 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16827EJ2V0DS00 (2nd edition) Date Published July 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2004 PA2716GR ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -7.0 A VGS = -10 V, ID = -7.0 A VGS = -4.5 V, ID = -7.0 A VGS = -4.0 V, ID = -7.0 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -15 V, ID = -7.0 A VGS = -10 V RG = 10 MIN. TYP. MAX. UNIT -1 m10 -1.0 10 5.5 7.3 8.3 3000 960 500 14 19 680 340 7.0 11.3 13.5 A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC -2.5 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -24 V VGS = -10 V ID = -14 A IF = 14 A, VGS = 0 V IF = 14 A, VGS = 0 V di/dt = 50 A/s 95 11 25 0.83 380 690 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD 50 L VDD PG. BVDSS VDS VGS(-) 0 Starting Tch = 1 s Duty Cycle 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(-) 90% 10% 10% 90% VGS(-) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA PG. 50 RL VDD 2 Data Sheet G16827EJ2V0DS PA2716GR TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C Mounted on ceramic substrate of 1200 mm2 x 2.2 mm TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE -1000 -100 -10 DC RDS(on) Limited (at VGS = 10 V) ID(DC) 1 ms 10 ms ID(pulse) PW = 100 s ID - Drain Current - A -1 -0.1 Power Dissipation Limited TA = 25C Single pulse Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 100 ms -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-A)2 100 Rth(ch-A)1 10 1 Single pulse, TA = 25C Rth(ch-A)1: Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Rth(ch-A)2: Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm 0.1 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16827EJ2V0DS 3 PA2716GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -150 Pulsed -125 ID - Drain Current - A -100 -75 -4 V -50 -25 0 0 -0.2 -0.4 -0.6 -0.8 -1 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S -2.5 VGS(off) - Gate Cut-off Voltage - V -2.0 -1.5 -1.0 -0.5 0 -50 0 50 100 150 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed 25 20 15 10 5 0 -1 -10 -100 -1000 ID - Drain Current - A VGS = -10 V -4.5 V -4 V VDS = -10 V ID = -1 mA 100 TA = 150C 75C 25C -40C VGS = -10 V -4.5 V ID - Drain Current - A -100 -10 -1 -0.1 -0.01 0 -1 -2 -3 -4 -5 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -1000 VDS = -10 V Pulsed TA = 150C 75C 25C -40C FORWARD TRANSFER CHARACTERISTICS 10 1 VDS = -10 V Pulsed 0.1 -0.1 -1 -10 -100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 15 ID = -7 A Pulsed 10 RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m 5 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V 4 Data Sheet G16827EJ2V0DS PA2716GR DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 Ciss, Coss, Crss - Capacitance - pF ID = -7 A Pulsed 15 VGS = -4 V -4.5 V -10 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss 1000 RDS(on) - Drain to Source On-state Resistance - m Coss Crss 10 100 VGS = 0 V f = 1 MHz 10 -0.1 -1 -10 -100 5 0 -50 0 50 100 150 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS 10000 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -30 ID = -14 A VDD = -24 V -15 V -6 V td(off) -15 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 -20 -10 tf 100 tr 10 td(on) VDD = -15 V VGS = -10 V RG = 10 -10 -100 -10 VGS VDS 0 -5 1 -0.1 -1 0 20 40 60 80 0 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 IF - Diode Forward Current - A 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V VGS = -10 V 0V Pulsed trr - Reverse Recovery Time - ns 1000 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 VGS = 0 V di/dt = 50 A/s 10 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet G16827EJ2V0DS 5 PA2716GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD -100 IAS - Single Avalanche Current - A Energy Derating Factor - % 120 100 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C VDD = -15 V RG = 25 VGS = -20 0 V IAS -14 A SINGLE AVALANCHE ENERGY DERATING FACTOR IAS = -14 A -10 EAS = 19.6 mJ -1 VDD = -15 V VGS = -20 0 V RG = 25 Starting Tch = 25C -0.1 0.01 L - Inductive Load - mH 6 Data Sheet G16827EJ2V0DS PA2716GR * The information in this document is current as of July, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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